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Advance Product Information
September 19, 2005
DC - 20 GHz Discrete power pHEMT
* * * * * * * *
TGF2022-60
Key Features and Performance
Frequency Range: DC - 20 GHz > 38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high reliability applications 6.0mm x 0.35um Power pHEMT Nominal Bias Vd = 8-12V, Idq = 448-752mA (Under RF Drive, Id rises from 448mA to 1480mA) Chip Dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in)
Product Description
The TriQuint TGF2022-60 is a discrete 6.0 mm pHEMT which operates from DC-20 GHz. The TGF2022-60 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-60 typically provides > 38 dBm of saturated output power with power gain of 12 dB. The The maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications. The TGF2022-60 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-60 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant
Primary Applications
* * * * *
35 30
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
Maximum Gain (dB)
25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V I
+
TGF2022-60
Value
12.5 V -5V to 0V 2820 mA 70 mA 33 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 14.2 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 1800 2250 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TABLE III RF CHARACTERIZATION TABLE 1/
(TA = 25 C, Nominal) f = 10 GHz
Vd = 10V Idq = 448 mA Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 38.8 51.6 12.3 3.34 3.812 0.922 176.3 Vd = 12V Idq = 448 mA 39.4 50 7.8 4.13 3.607 0.916 140.4
TGF2022-60
f = 18 GHz UNITS
SYMBOL
Power Tuned:
PARAMETER
Vd = 10V Idq = 448 mA 37.6 42 12.1 3.41 3.151 0.952 176.2
Vd = 12V Idq = 448 mA 38.1 38 7.6 4.00 3.473 0.955 175.9 dBm % dB pF -
Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/
Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient
37.6 57.0 12.4 6.68 4.425 0.942 173.6
39.0 53.8 12.4 6.49 3.947 0.931 173.3
37.2 44.0 7.9 4.01 3.566 0.957 175.9
37.9 41.0 7.6 4.49 3.736 0.962 175.8
dBm % dB pF -
1/ Values in this table are from measurements taken from a 0.75mm unit pHEMT cell at 10 and 18 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz 4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance Test Conditions TCH (oC) TJC (qC/W) TM (HRS)
Vd = 12 V 146 14.2 1.4E+6 (channel to backside of carrier) Idq = 448 mA Pdiss = 8.96 W Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Linear Model for 0.75 mm Unit pHEMT cell
Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2022-60
vi
-
Ls
Rp, Cp
8QLW S+(07 FHOO 5HIHUHQFH 3ODQH
Rs
Source Gate Drain
UPC
Source Source
Source
UPC = 0.75mm Unit pHEMT Cell
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd
Vd = 8V Id = 56mA
0.18 0.31 0.41 0.242 1.86 1.33 0.143 195.83 0.090 5.94 0.002 0.103 0.110 3920 54900
Vd = 8V Id = 75mA
0.19 0.31 0.43 0.25 2.019 1.28 0.144 199.07 0.084 6.24 0.002 0.103 0.109 5200 61900
Vd = 8V Id = 94mA
0.19 0.31 0.44 0.25 2.12 1.28 0.144 206.30 0.079 6.55 0.002 0.103 0.108 7250 76900
Vd = 10V Id = 56mA
0.20 0.36 0.41 0.23 2.04 1.36 0.142 224.73 0.080 6.82 0.002 0.102 0.108 5940 64100
Vd = 10V Id = 75mA
0.20 0.35 0.42 0.24 2.15 1.32 0.143 225.77 0.077 6.99 0.002 0.103 0.108 5700 78100
Vd = 12V Id = 56mA
0.21 0.40 0.40 0.227 2.13 1.38 0.142 244.05 0.076 7.37 0.002 0.102 0.108 6180 77000
UNITS
S pF pF pF pS nH nH nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2022-60
Linear Model for 6mm pHEMT
L - via = 0.0135 nH (9x)
8
UPC
9
7
UPC
10
6
UPC
11
Gate Pads (8x)
5 UPC 12
Drain Pads (8x)
4
UPC
13
3
UPC
14
2
UPC
15
1
UPC
16
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Unmatched S-parameters for 6 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 448mA
TGF2022-60
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.267 -160.66 20.810 96.96 -37.554 9.36 -3.758 -171.94 1 -0.248 -170.31 14.876 88.74 -37.477 3.63 -3.641 -174.40 1.5 -0.244 -173.59 11.346 83.87 -37.501 1.23 -3.583 -174.60 2 -0.241 -175.26 8.817 79.86 -37.554 -0.29 -3.522 -174.25 2.5 -0.238 -176.27 6.834 76.22 -37.626 -1.44 -3.451 -173.72 3 -0.236 -176.97 5.195 72.78 -37.716 -2.37 -3.370 -173.14 3.5 -0.233 -177.47 3.790 69.48 -37.821 -3.15 -3.280 -172.57 4 -0.230 -177.87 2.556 66.28 -37.941 -3.80 -3.183 -172.02 4.5 -0.227 -178.19 1.451 63.17 -38.074 -4.34 -3.079 -171.53 5 -0.223 -178.45 0.445 60.13 -38.220 -4.77 -2.972 -171.10 5.5 -0.220 -178.68 -0.479 57.17 -38.377 -5.09 -2.862 -170.73 6 -0.216 -178.88 -1.338 54.28 -38.545 -5.31 -2.751 -170.42 6.5 -0.212 -179.06 -2.142 51.45 -38.722 -5.43 -2.640 -170.17 7 -0.208 -179.23 -2.899 48.69 -38.906 -5.43 -2.530 -169.99 7.5 -0.204 -179.38 -3.615 46.00 -39.098 -5.32 -2.422 -169.85 8 -0.201 -179.52 -4.297 43.38 -39.294 -5.09 -2.316 -169.77 8.5 -0.197 -179.66 -4.947 40.82 -39.495 -4.74 -2.214 -169.73 9 -0.193 -179.79 -5.570 38.32 -39.699 -4.28 -2.114 -169.74 9.5 -0.189 -179.91 -6.168 35.88 -39.904 -3.70 -2.019 -169.78 10 -0.185 179.97 -6.744 33.50 -40.109 -2.99 -1.927 -169.85 10.5 -0.182 179.85 -7.299 31.19 -40.313 -2.16 -1.839 -169.95 11 -0.178 179.74 -7.835 28.93 -40.513 -1.22 -1.756 -170.08 11.5 -0.175 179.63 -8.354 26.73 -40.709 -0.15 -1.676 -170.23 12 -0.172 179.52 -8.857 24.58 -40.898 1.04 -1.600 -170.40 12.5 -0.169 179.41 -9.344 22.48 -41.079 2.34 -1.527 -170.58 13 -0.166 179.31 -9.818 20.44 -41.251 3.75 -1.459 -170.78 13.5 -0.163 179.21 -10.278 18.44 -41.412 5.26 -1.394 -170.98 14 -0.160 179.10 -10.726 16.49 -41.560 6.87 -1.332 -171.20 14.5 -0.157 179.00 -11.162 14.59 -41.694 8.58 -1.273 -171.43 15 -0.154 178.90 -11.586 12.73 -41.813 10.36 -1.218 -171.66 15.5 -0.152 178.81 -12.001 10.92 -41.916 12.21 -1.165 -171.90 16 -0.150 178.71 -12.405 9.15 -42.001 14.12 -1.115 -172.14 16.5 -0.147 178.61 -12.800 7.41 -42.068 16.07 -1.068 -172.38 17 -0.145 178.51 -13.186 5.71 -42.117 18.06 -1.023 -172.63 17.5 -0.143 178.42 -13.564 4.05 -42.148 20.07 -0.981 -172.88 18 -0.141 178.32 -13.934 2.43 -42.159 22.09 -0.940 -173.13 18.5 -0.139 178.23 -14.296 0.84 -42.153 24.11 -0.902 -173.38 19 -0.137 178.14 -14.650 -0.72 -42.129 26.11 -0.866 -173.63 19.5 -0.135 178.04 -14.998 -2.25 -42.088 28.09 -0.831 -173.87 20 -0.134 177.95 -15.340 -3.75 -42.031 30.03 -0.799 -174.12 20.5 -0.132 177.86 -15.675 -5.22 -41.959 31.93 -0.767 -174.37 21 -0.131 177.77 -16.004 -6.67 -41.874 33.78 -0.738 -174.61 21.5 -0.129 177.68 -16.328 -8.09 -41.776 35.57 -0.709 -174.86 22 -0.128 177.59 -16.647 -9.48 -41.666 37.30 -0.683 -175.10 22.5 -0.126 177.50 -16.961 -10.85 -41.547 38.97 -0.657 -175.34 23 -0.125 177.41 -17.270 -12.20 -41.418 40.57 -0.632 -175.58 23.5 -0.124 177.32 -17.575 -13.53 -41.282 42.11 -0.609 -175.81 24 -0.123 177.23 -17.875 -14.84 -41.139 43.58 -0.587 -176.05 24.5 -0.122 177.14 -18.172 -16.12 -40.991 44.98 -0.565 -176.28 25 -0.120 177.06 -18.466 -17.39 -40.838 46.32 -0.545 -176.51 25.5 -0.119 176.97 -18.756 -18.64 -40.681 47.59 -0.526 -176.74 26 -0.118 176.88 -19.043 -19.88 -40.521 48.80 -0.507 -176.96
Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Mechanical Drawing
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TGF2022-60
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2022-60
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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